What are the characteristics and performance of MEMS silicon piezoresistive pressure sensors? What is its structural principle?
Release time:
2025-02-21
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In various fields of life, pressure is a key parameter. There are many types of pressure sensors, such as resistive strain gauge pressure sensors, semiconductor strain gauge pressure sensors, and piezoresistive pressure sensors. However, the most widely used is the piezoresistive pressure sensor, which has a very low Price, high accuracy, and good linear characteristics. Silicon piezoresistive pressure sensors use high-precision semiconductor resistive strain gauges to form a Wheatstone bridge as the force-electric conversion measurement circuit, offering high measurement accuracy, low power consumption, and extremely low cost. The output of the piezoresistive sensor in the Wheatstone bridge is zero when there is no pressure change, consuming almost no power.
In various fields of life, pressure is a key parameter. There are many types of pressure sensors, such as resistive strain gauge pressure sensors, semiconductor strain gauge pressure sensors, and piezoresistive pressure sensors. However, the most widely used is the piezoresistive pressure sensor, which has a very low price, high accuracy, and good linear characteristics. Silicon piezoresistive pressure sensors use high-precision semiconductor resistive strain gauges to form a Wheatstone bridge as the force-electric conversion measurement circuit, offering high measurement accuracy, low power consumption, and extremely low cost. The output of the piezoresistive sensor in the Wheatstone bridge is zero when there is no pressure change, consuming almost no power.
In various fields of life, pressure is a key parameter. There are many types of pressure sensors, such as resistive strain gauge pressure sensors, semiconductor strain gauge pressure sensors, and piezoresistive pressure sensors. However, the most widely used is the piezoresistive pressure sensor, which has a very low price, high accuracy, and good linear characteristics. Silicon piezoresistive pressure sensors use high-precision semiconductor resistive strain gauges to form a Wheatstone bridge as the force-electric conversion measurement circuit, offering high measurement accuracy, low power consumption, and extremely low cost. The output of the piezoresistive sensor in the Wheatstone bridge is zero when there is no pressure change, consuming almost no power. MEMS silicon piezoresistive pressure sensors use a circular stress cup silicon film with a fixed peripheral wall, and employ MEMS technology to directly engrave four high-precision semiconductor strain gauges at the maximum stress point on its surface, forming a Wheatstone measurement bridge as the force-electric conversion measurement circuit, directly converting the physical quantity of pressure into electrical quantity, with a measurement accuracy of 0.01%~0.03%FS. The structure of the silicon piezoresistive pressure sensor is as follows: the upper and lower layers are made of glass, and the middle is a silicon wafer, with the central part of the silicon wafer shaped into a stress cup, which has a vacuum cavity above the stress silicon film, making it a typical absolute pressure sensor. The side of the stress silicon film that contacts the vacuum cavity generates a resistive strain gauge bridge circuit through photolithography. When external pressure enters the sensor's stress cup through the pressure inlet, the stress silicon film will slightly bulge upward due to external force, causing elastic deformation. The four resistive strain gauges will thus experience a change in resistance, disrupting the original balance of the Wheatstone bridge circuit, producing a voltage signal proportional to the pressure.
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